ROHM Semiconductor QH8JC5TCR

安装类型

表面贴装

包装/外壳

TSMT-8

供应商器件包装

TSMT8

Number of Elements per Chip

2

Package Type

TSMT-8

Qualification

-

Transistor Polarity

P Channel

Continuous Drain Current Id

3.5A

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

9.2 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

1.5 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 10 V, + 10 V

Unit Weight

0.000353 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

17.3 nC

Rds On - Drain-Source Resistance

91 mOhms

RoHS

Details

Typical Turn-Off Delay Time

82 ns

Id - Continuous Drain Current

3.5 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

3.5A (Ta)

厂商

Rohm Semiconductor

Product Status

活跃

包装

切割胶带

操作温度

150°C (TJ)

系列

-

子类别

MOSFETs

技术

Si

引脚数量

8

配置

Dual

通道数量

2 Channel

功率 - 最大

1.1W (Ta)

场效应管类型

2 P-Channel (Dual)

Rds On(Max)@Id,Vgs

91mOhm @ 3.5A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

850pF @ 30V

门极电荷(Qg)(最大)@Vgs

17.3nC @ 10V

上升时间

10 ns

漏源电压 (Vdss)

60V

产品类别

MOSFET

晶体管类型

2 P - Channel

信道型

P

场效应管特性

Standard

产品类别

MOSFET