Rohm Semiconductor QS6K21FRATR

安装类型

表面贴装

包装/外壳

SOT-23-6 Thin, TSOT-23-6

供应商器件包装

TSMT6 (SC-95)

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

1A (Ta)

Base Product Number

QS6K21

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Continuous Drain Current Id

1A

Vds - Drain-Source Breakdown Voltage

45 V

Typical Turn-On Delay Time

6 ns

Vgs th - Gate-Source Threshold Voltage

1.5 V

Pd - Power Dissipation

1.25 W

Transistor Polarity

N-Channel, NPN

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Unit Weight

0.000353 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

QS6K21FRA

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

1.5 nC

Rds On - Drain-Source Resistance

300 mOhms

RoHS

Details

Typical Turn-Off Delay Time

16 ns

Id - Continuous Drain Current

1 A

系列

Automotive, AEC-Q101

操作温度

150°C (TJ)

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Dual

通道数量

2 Channel

功率耗散

1.25W

功率 - 最大

950mW (Ta)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

420mOhm @ 1A, 4.5V

不同 Id 时 Vgs(th)（最大值）

1.5V @ 1mA

输入电容(Ciss)(Max)@Vds

10V

门极电荷(Qg)(最大)@Vgs

2.1nC @ 4.5V

上升时间

8 ns

漏源电压 (Vdss)

45V

产品类别

MOSFET

晶体管类型

2 N-Channel

信道型

Dual N

场效应管特性

Standard

产品类别

MOSFET