ROHM Semiconductor R6004KNXC7G

包装/外壳

TO-220FM-3

Channel Mode

Enhancement

Id - Continuous Drain Current

4 A

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Pd - Power Dissipation

40 W

Qg - Gate Charge

10.2 nC

Rds On - Drain-Source Resistance

980 mOhms

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

600 V

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

5 V

技术

Si

通道数量

1 Channel