Rohm Semiconductor R6035ENZ4C13

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247

厂商

Rohm Semiconductor

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V, 15V

Power Dissipation (Max)

379W (Tc)

Base Product Number

R6035

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

35A

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

40 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

379 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

110 nC

Rds On - Drain-Source Resistance

102 mOhms

RoHS

Details

Typical Turn-Off Delay Time

210 ns

Id - Continuous Drain Current

35 A

系列

-

操作温度

-

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

379W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

102mOhm @ 35A, 15V

不同 Id 时 Vgs(th)（最大值）

-

上升时间

80 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

-

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET