ROHM Semiconductor R6055VNZC17

包装/外壳

TO-3PF

安装类型

通孔

供应商器件包装

TO-3PF

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

600 V

Id - Continuous Drain Current

23 A

Rds On - Drain-Source Resistance

71 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

6.5 V

Qg - Gate Charge

80 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

99 W

Channel Mode

Enhancement

Fall Time

26 ns

Factory Pack QuantityFactory Pack Quantity

30

Typical Turn-Off Delay Time

105 ns

Typical Turn-On Delay Time

35 ns

Package

Tube

Base Product Number

R6055VN

Current - Continuous Drain (Id) @ 25℃

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V, 15V

厂商

Rohm Semiconductor

Power Dissipation (Max)

99W (Tc)

Product Status

活跃

包装

Tube

操作温度

150°C (TJ)

系列

-

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

71mOhm @ 16A, 15V

不同 Id 时 Vgs(th)（最大值）

6.5V @ 1.5mA

输入电容(Ciss)(Max)@Vds

3700 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

80 nC @ 10 V

上升时间

35 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

晶体管类型

1 N-Channel

场效应管特性

-