Rohm Semiconductor R6070JNZ4C13

包装/外壳

TO-247-3

安装类型

通孔

引脚数

3

供应商器件包装

TO-247G

厂商

Rohm Semiconductor

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

7V @ 3mA

Power Dissipation (Max)

770W (Tc)

Qualification

-

Continuous Drain Current Id

70A

Channel Mode

Enhancement

Package Type

TO-247G

Number of Elements per Chip

1

Qg - Gate Charge

165 nC

Rds On - Drain-Source Resistance

58 mOhms

RoHS

Details

Typical Turn-Off Delay Time

150 ns

Id - Continuous Drain Current

70 A

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

55 ns

Vgs th - Gate-Source Threshold Voltage

7 V

Pd - Power Dissipation

770 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

系列

-

操作温度

150°C (TJ)

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

770W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

58mOhm @ 35A, 15V

输入电容(Ciss)(Max)@Vds

6000 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

165 nC @ 15 V

上升时间

100 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET