Rohm Semiconductor R6077VNZ4C13

包装/外壳

TO-247-3

安装类型

通孔

供应商器件包装

TO-247

Power Dissipation (Max)

781W (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V, 15V

Current - Continuous Drain (Id) @ 25℃

77A (Tc)

Product Status

活跃

Package

Tube

厂商

Rohm Semiconductor

Qualification

-

Continuous Drain Current Id

77A

Vds - Drain-Source Breakdown Voltage

600 V

Vgs th - Gate-Source Threshold Voltage

6.5 V

Pd - Power Dissipation

781 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

108 nC

Rds On - Drain-Source Resistance

51 mOhms

Id - Continuous Drain Current

77 A

操作温度

150°C (TJ)

系列

-

通道数量

1 Channel

功率耗散

781W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

51mOhm @ 23A, 15V

不同 Id 时 Vgs(th)（最大值）

6.5V @ 1.9mA

输入电容(Ciss)(Max)@Vds

5200 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

108 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

信道型

N通道

场效应管特性

-