ROHM Semiconductor R6077VNZC17

安装类型

通孔

包装/外壳

TO-3P-3 Full Pack

供应商器件包装

TO-3PF

Base Product Number

R6077

Channel Mode

Enhancement

Current - Continuous Drain (Id) @ 25℃

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V, 15V

Id - Continuous Drain Current

29 A

Maximum Operating Temperature

+ 150 C

厂商

Rohm Semiconductor

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Package

Tube

Pd - Power Dissipation

113 W

Power Dissipation (Max)

113W (Tc)

Product Status

活跃

Qg - Gate Charge

108 nC

Rds On - Drain-Source Resistance

46 mOhms

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

600 V

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

5.5 V

操作温度

150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

51mOhm @ 23A, 15V

不同 Id 时 Vgs(th)（最大值）

6.5V @ 1.9mA

输入电容(Ciss)(Max)@Vds

5200 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

108 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

场效应管特性

-