Rohm Semiconductor R6535ENZ4C13

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247G

厂商

Rohm Semiconductor

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

379W (Tc)

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

35A

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

35 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

379 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

110 nC

Rds On - Drain-Source Resistance

115 mOhms

RoHS

Details

Typical Turn-Off Delay Time

220 ns

Id - Continuous Drain Current

35 A

系列

-

操作温度

150°C (TJ)

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

379W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

115mOhm @ 18.1A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1.21mA

输入电容(Ciss)(Max)@Vds

2600 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

110 nC @ 10 V

上升时间

85 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET