ROHM Semiconductor R6547ENZ4C13

包装/外壳

TO-247G-3

安装类型

通孔

供应商器件包装

TO-247G

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

40 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

480 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

150 nC

Rds On - Drain-Source Resistance

80 mOhms

RoHS

Details

Typical Turn-Off Delay Time

280 ns

Id - Continuous Drain Current

47 A

Package

Tube

Current - Continuous Drain (Id) @ 25℃

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Rohm Semiconductor

Power Dissipation (Max)

480W (Tc)

Product Status

活跃

包装

Tube

操作温度

150°C (TJ)

系列

-

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

80mOhm @ 25.8A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1.72mA

输入电容(Ciss)(Max)@Vds

3800 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

150 nC @ 10 V

上升时间

120 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET