Rohm Semiconductor R6576ENZ4C13

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247

厂商

Rohm Semiconductor

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

76A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

735W (Tc)

Continuous Drain Current

76(A)

Drain-Source On-Volt

650(V)

Operating Temperature Classification

Military

Package Type

TO-247

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

通孔

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

55 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

735 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

600

Mounting Styles

通孔

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

260 nC

Rds On - Drain-Source Resistance

46 mOhms

RoHS

Details

Typical Turn-Off Delay Time

450 ns

Id - Continuous Drain Current

76 A

系列

-

操作温度

150°C (TJ)

包装

Rail/Tube

类型

功率MOSFET

子类别

MOSFETs

引脚数量

3 +Tab

极性

N

配置

Single

通道数量

1 Channel

功率耗散

735(W)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

46mOhm @ 44.4A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 2.96mA

输入电容(Ciss)(Max)@Vds

6500 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

260 nC @ 10 V

上升时间

220 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET