Rohm Semiconductor R8001CND3FRATL

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

TO-252

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

36W (Tc)

Base Product Number

R8001

Continuous Drain Current

1(A)

Drain-Source On-Volt

800(V)

Package Type

DPAK

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±30(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

表面贴装

Vds - Drain-Source Breakdown Voltage

800 V

Typical Turn-On Delay Time

20 ns

Vgs th - Gate-Source Threshold Voltage

5.5 V

Pd - Power Dissipation

36 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

7.2 nC

Rds On - Drain-Source Resistance

8.7 Ohms

RoHS

Details

Typical Turn-Off Delay Time

33 ns

Id - Continuous Drain Current

1 A

系列

Automotive, AEC-Q101

操作温度

150°C (TJ)

包装

卷带

类型

功率MOSFET

子类别

MOSFETs

引脚数量

2 +Tab

极性

N

通道数量

1 Channel

功率耗散

36(W)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8.7Ohm @ 500mA, 10V

不同 Id 时 Vgs(th)（最大值）

5.5V @ 1mA

输入电容(Ciss)(Max)@Vds

60 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

7.2 nC @ 10 V

上升时间

21 ns

漏源电压 (Vdss)

800 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET