Rohm Semiconductor R8002ANJGTL

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

TO-263S

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

62W (Tc)

Vds - Drain-Source Breakdown Voltage

800 V

Typical Turn-On Delay Time

20 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

62 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

13 nC

Rds On - Drain-Source Resistance

4.3 Ohms

RoHS

Details

Typical Turn-Off Delay Time

35 ns

Id - Continuous Drain Current

2 A

系列

-

操作温度

150°C (TJ)

包装

切割胶带

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.3Ohm @ 1A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

250 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

13 nC @ 10 V

上升时间

25 ns

漏源电压 (Vdss)

800 V

Vgs（最大值）

±30V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET