Rohm Semiconductor R8008ANJGTL

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

TO-263S

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

195W (Tc)

Continuous Drain Current

8(A)

Drain-Source On-Volt

800(V)

Operating Temperature Classification

Military

Package Type

LPTS

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±30(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

表面贴装

Vds - Drain-Source Breakdown Voltage

800 V

Typical Turn-On Delay Time

30 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

195 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

38 nC

Rds On - Drain-Source Resistance

1.03 Ohms

RoHS

Details

Typical Turn-Off Delay Time

90 ns

Id - Continuous Drain Current

8 A

系列

-

操作温度

150°C (TJ)

包装

卷带

类型

功率MOSFET

子类别

MOSFETs

引脚数量

2 +Tab

极性

N

配置

Single

通道数量

1 Channel

功率耗散

195(W)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.03Ohm @ 4A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

1100 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

38 nC @ 10 V

上升时间

35 ns

漏源电压 (Vdss)

800 V

Vgs（最大值）

±30V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET