ROHM Semiconductor R8011KNXC7G

安装类型

通孔

包装/外壳

TO-220-3 Full Pack

供应商器件包装

TO-220FM

Package

Tape & Reel (TR);Cut Tape (CT);

Current - Continuous Drain (Id) @ 25℃

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Rohm Semiconductor

Power Dissipation (Max)

65W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

800 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

65 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

37 nC

Rds On - Drain-Source Resistance

450 mOhms

Id - Continuous Drain Current

11 A

操作温度

150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

450mOhm @ 5.5A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 5.5mA

输入电容(Ciss)(Max)@Vds

1200 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

37 nC @ 10 V

漏源电压 (Vdss)

800 V

Vgs（最大值）

±20V

场效应管特性

-