Rohm Semiconductor RCJ451N20TL

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

TO-263S

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

1.56W (Ta), 211W (Tc)

Qualification

-

Continuous Drain Current Id

45A

Number of Elements per Chip

1

Package Type

TO-263S

Vds - Drain-Source Breakdown Voltage

200 V

Typical Turn-On Delay Time

52 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

211 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

80 nC

Rds On - Drain-Source Resistance

55 mOhms

RoHS

Details

Typical Turn-Off Delay Time

90 ns

Id - Continuous Drain Current

45 A

操作温度

150°C (TJ)

包装

MouseReel

子类别

MOSFETs

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

211W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

55mOhm @ 22.5A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

4200 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

80 nC @ 10 V

上升时间

210 ns

漏源电压 (Vdss)

200 V

Vgs（最大值）

±30V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET