ROHM Semiconductor RD3G03BBGTL1

包装/外壳

TO-252-3

安装类型

表面贴装

供应商器件包装

TO-252

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

40 V

Id - Continuous Drain Current

65 A

Rds On - Drain-Source Resistance

6.5 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Qg - Gate Charge

18.2 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

50 W

Channel Mode

Enhancement

Fall Time

16 ns

Factory Pack QuantityFactory Pack Quantity

2500

Typical Turn-Off Delay Time

42 ns

Typical Turn-On Delay Time

12 ns

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Rohm Semiconductor

Power Dissipation (Max)

50W (Tc)

Product Status

活跃

包装

MouseReel

操作温度

150°C (TJ)

系列

-

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

6.5mOhm @ 35A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

1170 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

18.2 nC @ 10 V

上升时间

14 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

场效应管特性

-