ROHM Semiconductor RD3R05BBHTL1

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

TO-252

Base Product Number

RD3R05

Channel Mode

Enhancement

Current - Continuous Drain (Id) @ 25℃

50A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Id - Continuous Drain Current

50 A

Maximum Operating Temperature

+ 150 C

厂商

Rohm Semiconductor

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Pd - Power Dissipation

89 W

Power Dissipation (Max)

89W (Ta)

Product Status

活跃

Qg - Gate Charge

37 nC

Rds On - Drain-Source Resistance

35 mOhms

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

150 V

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

4 V

操作温度

150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

29mOhm @ 25A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1mA

输入电容(Ciss)(Max)@Vds

2150 pF @ 75 V

门极电荷(Qg)(最大)@Vgs

37 nC @ 10 V

漏源电压 (Vdss)

150 V

Vgs（最大值）

±20V

场效应管特性

-