Rohm Semiconductor RD3S100AAFRATL

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

TO-252

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Power Dissipation (Max)

85W (Tc)

Base Product Number

RD3S100

Continuous Drain Current

10(A)

Drain-Source On-Volt

190(V)

Operating Temperature Classification

Military

Package Type

DPAK

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

表面贴装

MSL

-

Qualification

AEC-Q101

Continuous Drain Current Id

10A

Vds - Drain-Source Breakdown Voltage

190 V

Typical Turn-On Delay Time

15 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

85 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

6 S

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

52 nC

Rds On - Drain-Source Resistance

182 mOhms

RoHS

Details

Typical Turn-Off Delay Time

140 ns

Id - Continuous Drain Current

10 A

系列

Automotive, AEC-Q101

操作温度

150°C (TJ)

包装

切割胶带

类型

功率MOSFET

子类别

MOSFETs

引脚数量

2 +Tab

极性

N

通道数量

1 Channel

功率耗散

85(W)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

182mOhm @ 5A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

2000 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

52 nC @ 10 V

上升时间

20 ns

漏源电压 (Vdss)

190 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET