Rohm Semiconductor RD3U041AAFRATL

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

安装类型

表面贴装

供应商器件包装

TO-252

Base Product Number

RD3U041

Power Dissipation (Max)

29W (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

4A (Tc)

Product Status

活跃

厂商

Rohm Semiconductor

Vds - Drain-Source Breakdown Voltage

250 V

Typical Turn-On Delay Time

15 ns

Vgs th - Gate-Source Threshold Voltage

5.5 V

Pd - Power Dissipation

29 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

8.5 nC

Rds On - Drain-Source Resistance

1.3 Ohms

RoHS

Details

Typical Turn-Off Delay Time

18 ns

Id - Continuous Drain Current

4 A

操作温度

150°C (TJ)

系列

Automotive, AEC-Q101

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.3Ohm @ 2A, 10V

不同 Id 时 Vgs(th)（最大值）

5.5V @ 1mA

输入电容(Ciss)(Max)@Vds

350 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

8.5 nC @ 10 V

上升时间

14 ns

漏源电压 (Vdss)

250 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET