ROHM Semiconductor RF4G060ATTCR

安装类型

表面贴装

包装/外壳

DFN2020-8S

供应商器件包装

HUML2020L8

Number of Elements per Chip

1

Package Type

DFN2020

Qualification

-

Continuous Drain Current Id

6A

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

9.5 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

2 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 10 V, + 10 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

17.2 nC

Rds On - Drain-Source Resistance

40 mOhms

RoHS

Details

Typical Turn-Off Delay Time

83 ns

Id - Continuous Drain Current

6 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Rohm Semiconductor

Power Dissipation (Max)

2W (Ta)

Product Status

活跃

包装

切割胶带

操作温度

150°C (TJ)

系列

-

子类别

MOSFETs

技术

Si

引脚数量

8

配置

Single

通道数量

1 Channel

功率耗散

2W

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

40mOhm @ 6A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

880 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

17.2 nC @ 10 V

上升时间

18 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 P - Channel

信道型

P

场效应管特性

-

产品类别

MOSFET