ROHM Semiconductor RF4P060BGTCR

安装类型

表面贴装

包装/外壳

8-PowerUDFN

供应商器件包装

DFN2020-8S

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

RF4P060

Current - Continuous Drain (Id) @ 25℃

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Rohm Semiconductor

Power Dissipation (Max)

2W (Ta)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

2 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

6.7 nC

Rds On - Drain-Source Resistance

78 mOhms

Id - Continuous Drain Current

6 A

操作温度

150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

53mOhm @ 6A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

305 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

6.7 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

场效应管特性

-