Rohm Semiconductor RJ1L12CGNTLL

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

TO-263AB

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

120A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

166W (Ta)

Continuous Drain Current

120(A)

Drain-Source On-Volt

60(V)

Operating Temperature Classification

Military

Package Type

LPTL

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

表面贴装

Number of Elements per Chip

1

Maximum Operating Temperature

150 °C

Minimum Operating Temperature

-55 °C

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

33 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

166 W

Transistor Polarity

N-Channel

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

139 nC

Rds On - Drain-Source Resistance

3.4 mOhms

RoHS

Details

Typical Turn-Off Delay Time

180 ns

Id - Continuous Drain Current

120 A

系列

-

操作温度

150°C (TJ)

包装

卷带

类型

功率MOSFET

子类别

MOSFETs

引脚数量

2 +Tab

极性

N

配置

Single

通道数量

1 Channel

功率耗散

166(W)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3.4mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 200μA

输入电容(Ciss)(Max)@Vds

7100 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

139 nC @ 10 V

上升时间

48 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET

宽度

9.2mm

高度

4.7mm

长度

10.4mm