ROHM Semiconductor RJU003N03FRAT106

包装/外壳

SOT-323-3

安装类型

表面贴装

引脚数

3

供应商器件包装

UMT3

Continuous Drain Current Id

300

Continuous Drain Current

0.3(A)

Drain-Source On-Volt

30(V)

Operating Temperature Classification

Military

Package Type

UMT

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±12(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

表面贴装

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

6 ns

Vgs th - Gate-Source Threshold Voltage

800 mV

Pd - Power Dissipation

200 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Unit Weight

0.000212 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

400 mS

Part # Aliases

RJU003N03FRA

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

-

Rds On - Drain-Source Resistance

1.1 Ohms

Typical Turn-Off Delay Time

9 ns

Id - Continuous Drain Current

300 mA

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1.5V @ 1mA

Product Status

活跃

Power Dissipation (Max)

200mW (Ta)

厂商

Rohm Semiconductor

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Current - Continuous Drain (Id) @ 25℃

300mA (Ta)

Base Product Number

RJU003

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

包装

卷带

系列

-

操作温度

150°C (TJ)

类型

小信号

子类别

MOSFETs

技术

Si

极性

N

配置

Single

通道数量

1 Channel

功率耗散

200

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.1Ohm @ 300mA, 4.5V

输入电容(Ciss)(Max)@Vds

24 pF @ 10 V

上升时间

4 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±12V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET