ROHM Semiconductor RQ3P045ATTB1

包装/外壳

HSMT-8

Id - Continuous Drain Current

14.5 A

Rds On - Drain-Source Resistance

92 mOhms

Qg - Gate Charge

49 nC

Channel Mode

Enhancement

Mounting Styles

SMD/SMT

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

P-Channel

Pd - Power Dissipation

20 W

Vgs th - Gate-Source Threshold Voltage

2.5 V

Vds - Drain-Source Breakdown Voltage

100 V

技术

Si

通道数量

1 Channel