Rohm Semiconductor RQ7L055BGTCR

安装类型

表面贴装

包装/外壳

8-SMD, Flat Lead

供应商器件包装

TSMT8

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

5.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 1mA

Power Dissipation (Max)

1.1W (Ta)

Package Type

TSMT-8

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

1.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

7.6 nC

Rds On - Drain-Source Resistance

29 mOhms

Id - Continuous Drain Current

5.5 A

系列

-

操作温度

150°C (TJ)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

29mOhm @ 5.5A, 10V

输入电容(Ciss)(Max)@Vds

460 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

7.6 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

信道型

N

场效应管特性

-