Rohm Semiconductor RRQ030P03HZGTR

安装类型

表面贴装

包装/外壳

SOT-23-6 Thin, TSOT-23-6

供应商器件包装

TSMT6 (SC-95)

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Power Dissipation (Max)

950mW (Ta)

Base Product Number

RRQ030

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

1.25 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

5.2 nC

Rds On - Drain-Source Resistance

75 mOhms

Id - Continuous Drain Current

3 A

系列

Automotive, AEC-Q101

操作温度

150°C (TJ)

通道数量

1 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

125mOhm @ 1.5A, 4V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

480 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

5.2 nC @ 5 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

场效应管特性

-