Rohm Semiconductor RRR030P03HZGTL

安装类型

表面贴装

包装/外壳

SC-96

引脚数

3

供应商器件包装

TSMT3

Current - Continuous Drain (Id) @ 25℃

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 1mA

Power Dissipation (Max)

700mW (Ta)

Base Product Number

RRR030

厂商

Rohm Semiconductor

Product Status

活跃

Continuous Drain Current

3(A)

Drain-Source On-Volt

30(V)

Operating Temperature Classification

Military

Package Type

TSMT

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

表面贴装

MSL

-

Qualification

AEC-Q101

Continuous Drain Current Id

3A

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

7 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

1 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000423 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

2.4 S

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

5.2 nC

Rds On - Drain-Source Resistance

75 mOhms

RoHS

Details

Typical Turn-Off Delay Time

50 ns

Id - Continuous Drain Current

3 A

操作温度

150°C (TJ)

系列

Automotive, AEC-Q101

包装

卷带

类型

小信号

子类别

MOSFETs

极性

P

通道数量

1 Channel

功率耗散

1(W)

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

75mOhm @ 3A, 10V

输入电容(Ciss)(Max)@Vds

480 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

5.2 nC @ 5 V

上升时间

18 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 P-Channel

信道型

P Channel

场效应管特性

-

产品类别

MOSFET