Rohm Semiconductor RRS075P03FRATB
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RRS075P03FRATB
2078-RRS075P03FRATB
晶体管 - FET,MOSFET - 单个
8-SOIC (0.154", 3.90mm Width)
大陆
立即发货

MOSFET P-CH 30V 7.5A 8SOP
1最小包装量--
RRS075P03FRATB详情
Rohm Semiconductor RRS075P03FRATB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
8-SOIC (0.154", 3.90mm Width)
安装类型
表面贴装
供应商器件包装
8-SOP
Base Product Number
RRS075
厂商
Rohm Semiconductor
Package
Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Current - Continuous Drain (Id) @ 25℃
7.5A (Ta)
Product Status
不用于新设计
Power Dissipation (Max)
2W (Ta)
MSL
MSL 1 - Unlimited
Qualification
AEC-Q101
Continuous Drain Current Id
7.5A
Vds - Drain-Source Breakdown Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
1 V
Pd - Power Dissipation
2 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
21 nC
Rds On - Drain-Source Resistance
21 mOhms
Id - Continuous Drain Current
7.5 A
系列
-
操作温度
-55°C ~ 150°C (TJ)
通道数量
1 Channel
功率耗散
2W
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
21mOhm @ 7.5A, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 1mA
输入电容(Ciss)(Max)@Vds
1900 pF @ 10 V
门极电荷(Qg)(最大)@Vgs
21 nC @ 5 V
漏源电压 (Vdss)
30 V
Vgs(最大值)
±20V
信道型
P Channel
场效应管特性
-
RRS075P03FRATB拓展信息
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
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