ROHM Semiconductor RS1G201ATTB1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

8-HSOP

Continuous Drain Current Id

78

Continuous Drain Current

20(A)

Drain-Source On-Volt

40(V)

Operating Temperature Classification

Military

Package Type

HSOP EP

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

表面贴装

Number of Elements per Chip

1

MSL

-

Qualification

-

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

RS1G

Current - Continuous Drain (Id) @ 25℃

20A (Ta), 78A (Tc)

厂商

Rohm Semiconductor

Power Dissipation (Max)

3W (Ta), 40W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

40 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

-

Mounting Styles

SMD/SMT

Qg - Gate Charge

130 nC

Rds On - Drain-Source Resistance

5.2 mOhms

Id - Continuous Drain Current

78 A

操作温度

-55°C ~ 150°C (TJ)

系列

-

类型

功率MOSFET

技术

MOSFET (Metal Oxide)

引脚数量

8

极性

P

通道数量

1 Channel

功率耗散

40

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

5.2mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

6890 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

130 nC @ 10 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

信道型

P Channel

场效应管特性

-