Rohm Semiconductor RS1L151ATTB1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

8-HSOP

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

3W (Ta)

Continuous Drain Current Id

56

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

40 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

130 nC

Rds On - Drain-Source Resistance

11.3 mOhms

Id - Continuous Drain Current

56 A

系列

-

操作温度

150°C (TJ)

通道数量

1 Channel

功率耗散

40

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

11.3mOhm @ 15A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

6900 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

130 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

信道型

P

场效应管特性

-