Rohm Semiconductor RS3L140GNGZETB

安装类型

表面贴装

包装/外壳

8-SOIC (0.154", 3.90mm Width)

供应商器件包装

8-SOP

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

14A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.7V @ 500μA

Power Dissipation (Max)

1.4W (Ta)

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

14 ns

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

2 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

58 nC

Rds On - Drain-Source Resistance

6.5 mOhms

RoHS

Details

Typical Turn-Off Delay Time

67 ns

Id - Continuous Drain Current

14 A

系列

-

操作温度

150°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

6.5mOhm @ 14A, 10V

输入电容(Ciss)(Max)@Vds

2980 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

58 nC @ 10 V

上升时间

18 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET