ROHM Semiconductor RS6G100BGTB1
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RS6G100BGTB1
2078-RS6G100BGTB1
晶体管 - FET,MOSFET - 单个
HSOP=8
大陆
立即发货

MOSFET RS6G100BG is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.
--最小包装量--
RS6G100BGTB1详情
ROHM Semiconductor RS6G100BGTB1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
HSOP=8
安装类型
表面贴装
供应商器件包装
8-HSOP
RoHS
Details
Mounting Styles
SMD/SMT
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
100 A
Rds On - Drain-Source Resistance
3.4 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Qg - Gate Charge
24 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
59 W
Channel Mode
Enhancement
Fall Time
18 ns
Factory Pack QuantityFactory Pack Quantity
2500
Typical Turn-Off Delay Time
46 ns
Typical Turn-On Delay Time
15 ns
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
厂商
Rohm Semiconductor
Power Dissipation (Max)
3W (Ta), 59W (Tc)
Product Status
活跃
包装
MouseReel
操作温度
150°C (TJ)
系列
-
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
3.4mOhm @ 90A, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 1mA
输入电容(Ciss)(Max)@Vds
1510 pF @ 20 V
门极电荷(Qg)(最大)@Vgs
24 nC @ 10 V
上升时间
16 ns
漏源电压 (Vdss)
40 V
Vgs(最大值)
±20V
场效应管特性
-
RS6G100BGTB1拓展信息
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