ROHM Semiconductor RS6N120BHTB1

包装/外壳

HSOP-8

Channel Mode

Enhancement

Id - Continuous Drain Current

135 A

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Pd - Power Dissipation

104 W

Qg - Gate Charge

53 nC

Rds On - Drain-Source Resistance

3.3 mOhms

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

80 V

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

4 V

技术

Si

通道数量

1 Channel