ROHM Semiconductor RS6P060BHTB1
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RS6P060BHTB1
2078-RS6P060BHTB1
晶体管 - FET,MOSFET - 单个
HSOP-8
大陆
立即发货

MOSFET RS6P060BH is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.
--最小包装量--
RS6P060BHTB1详情
ROHM Semiconductor RS6P060BHTB1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
HSOP-8
安装类型
表面贴装
供应商器件包装
8-HSOP
RoHS
Details
Mounting Styles
SMD/SMT
Rds On - Drain-Source Resistance
10.6 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
25 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
73 W
Channel Mode
Enhancement
Fall Time
25 ns
Factory Pack QuantityFactory Pack Quantity
2500
Typical Turn-Off Delay Time
43 ns
Typical Turn-On Delay Time
22 ns
Id - Continuous Drain Current
60 A
Vds - Drain-Source Breakdown Voltage
100 V
Transistor Polarity
N-Channel
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Base Product Number
RS6P060
Current - Continuous Drain (Id) @ 25℃
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
厂商
Rohm Semiconductor
Power Dissipation (Max)
3W (Ta), 73W (Tc)
Product Status
活跃
包装
MouseReel
操作温度
150°C (TJ)
系列
-
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
10.6mOhm @ 60A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 1mA
输入电容(Ciss)(Max)@Vds
1560 pF @ 50 V
门极电荷(Qg)(最大)@Vgs
25 nC @ 10 V
上升时间
20 ns
漏源电压 (Vdss)
100 V
Vgs(最大值)
±20V
场效应管特性
-
RS6P060BHTB1拓展信息
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