ROHM Semiconductor RSH065N06GZETB
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RSH065N06GZETB
2078-RSH065N06GZETB
晶体管 - FET,MOSFET - 单个
8-SOIC (0.154, 3.90mm Width)
大陆
立即发货

4V DRIVE NCH MOSFET. POWER MOSFE
--最小包装量--
RSH065N06GZETB详情
ROHM Semiconductor RSH065N06GZETB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
16 Weeks
安装类型
表面贴装
包装/外壳
8-SOIC (0.154, 3.90mm Width)
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.5V @ 1mA
Current - Continuous Drain (Id) @ 25℃
6.5A Ta
Drive Voltage (Max Rds On, Min Rds On)
4V 10V
Power Dissipation (Max)
2W Ta
已出版
2009
操作温度
150°C
包装
Cut Tape (CT)
零件状态
活跃
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
37m Ω @ 6.5A, 10V
输入电容(Ciss)(Max)@Vds
900pF @ 10V
门极电荷(Qg)(最大)@Vgs
16nC @ 5V
漏源电压 (Vdss)
60V
Vgs(最大值)
20V
RoHS状态
ROHS3 Compliant
RSH065N06GZETB拓展信息
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor







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