Rohm Semiconductor RSQ030N08HZGTR

安装类型

表面贴装

包装/外壳

SOT-23-6 Thin, TSOT-23-6

供应商器件包装

TSMT6 (SC-95)

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Power Dissipation (Max)

950mW (Ta)

Base Product Number

RSQ030

Continuous Drain Current

3(A)

Drain-Source On-Volt

80(V)

Operating Temperature Classification

Military

Package Type

TSMT

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

表面贴装

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Continuous Drain Current Id

3A

Vds - Drain-Source Breakdown Voltage

80 V

Typical Turn-On Delay Time

6.5 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

1.25 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

6.5 nC

Rds On - Drain-Source Resistance

131 mOhms

RoHS

Details

Typical Turn-Off Delay Time

35 ns

Id - Continuous Drain Current

3 A

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 150°C (TJ)

包装

卷带

类型

小信号

子类别

MOSFETs

引脚数量

6

极性

N

配置

Single

通道数量

1 Channel

功率耗散

1.25(W)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

131mOhm @ 3A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

550 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

6.5 nC @ 5 V

上升时间

8 ns

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET