Rohm Semiconductor RSS065N06HZGTB

安装类型

表面贴装

包装/外壳

8-SOIC (0.154", 3.90mm Width)

供应商器件包装

8-SOP

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Power Dissipation (Max)

2W (Ta)

Number of Elements per Chip

1

Package Type

SOP

Channel Mode

Enhancement

MSL

-

Qualification

AEC-Q101

Continuous Drain Current Id

6.5A

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

13 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

2 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

11 nC

Rds On - Drain-Source Resistance

37 mOhms

RoHS

Details

Typical Turn-Off Delay Time

60 ns

Id - Continuous Drain Current

6.5 A

系列

Automotive, AEC-Q101

操作温度

150°C (TJ)

包装

切割胶带

子类别

MOSFETs

引脚数量

8

配置

Single

通道数量

1 Channel

功率耗散

2W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

37mOhm @ 6.5A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

900 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

16 nC @ 5 V

上升时间

25 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

功率MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET