Rohm Semiconductor RSS095N05FRATB

安装类型

表面贴装

包装/外壳

8-SOIC (0.154", 3.90mm Width)

供应商器件包装

8-SOP

厂商

Rohm Semiconductor

Product Status

不用于新设计

Current - Continuous Drain (Id) @ 25℃

9.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Power Dissipation (Max)

1.4W (Ta)

Base Product Number

RSS095

Qualification

AEC-Q101

Continuous Drain Current Id

9.5A

Vds - Drain-Source Breakdown Voltage

45 V

Typical Turn-On Delay Time

20 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

2 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.002926 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

RSS095N05FRA

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

18.9 nC

Rds On - Drain-Source Resistance

16 mOhms

RoHS

Details

Typical Turn-Off Delay Time

78 ns

Id - Continuous Drain Current

9.5 A

系列

-

操作温度

150°C (TJ)

包装

切割胶带

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

2W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

16mOhm @ 9.5A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

1830 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

26.5 nC @ 5 V

上升时间

35 ns

漏源电压 (Vdss)

45 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET