Rohm Semiconductor RSS130N03HZGTB

安装类型

表面贴装

包装/外壳

8-SOIC (0.154", 3.90mm Width)

供应商器件包装

8-SOP

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

13A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Power Dissipation (Max)

2W (Ta)

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

2 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

25 nC

Rds On - Drain-Source Resistance

8.3 mOhms

Id - Continuous Drain Current

13 A

系列

Automotive, AEC-Q101

操作温度

150°C (TJ)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8.3mOhm @ 13A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

2000 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

35 nC @ 5 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

场效应管特性

-