Rohm Semiconductor RTQ025P02HZGTR

安装类型

表面贴装

包装/外壳

SOT-23-6 Thin, TSOT-23-6

供应商器件包装

TSMT6 (SC-95)

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Power Dissipation (Max)

950mW (Ta)

Base Product Number

RTQ025

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Continuous Drain Current Id

2.5A

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

1.25 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

6.4 nC

Rds On - Drain-Source Resistance

100 mOhms

RoHS

Details

Typical Turn-Off Delay Time

40 ns

Id - Continuous Drain Current

2.5 A

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

1.25W

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

100mOhm @ 2.5A, 4.5V

不同 Id 时 Vgs(th)（最大值）

2V @ 1mA

输入电容(Ciss)(Max)@Vds

580 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

6.4 nC @ 4.5 V

上升时间

20 ns

漏源电压 (Vdss)

20 V

Vgs（最大值）

±12V

产品类别

MOSFET

信道型

P Channel

场效应管特性

-

产品类别

MOSFET