ROHM Semiconductor RTU002P02GZT106
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RTU002P02GZT106
2078-RTU002P02GZT106
晶体管 - FET,MOSFET - 单个
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RTU002P02GZT106 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ROHM Semiconductor stock available at utmel
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RTU002P02GZT106详情
ROHM Semiconductor RTU002P02GZT106重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Package/Enclosure
TO-220
ESD Diode
无
Schottky Diode
无
Drain-source voltage Vds
700V
Gate voltage Vgs
20V
Continuous Drain Current Id
8.5A
Pd-power dissipation (Max)
104W
Rds On(Max)@Id,Vgs
600mΩ@10V
VGS(th)
4
Ciss(pF)
900
Coss(pF)
23
Crss(pF)
1.4
Qg*(nC)
14.5
Qgd(nC)
2.6
Td(on)(ns)
20
Td(off)(ns)
33
Trr(ns)
260
Qrr(nC)
3500
fet type
N-Channel
RTU002P02GZT106拓展信息
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor







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