ROHM Semiconductor RV2E014AJT2CL
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RV2E014AJT2CL
2078-RV2E014AJT2CL
晶体管 - FET,MOSFET - 单个
DFN1006-3
大陆
立即发货

MOSFET Nch 30V 1.4A, DFN1006-3, Small Signal MOSFET
--最小包装量--
RV2E014AJT2CL详情
ROHM Semiconductor RV2E014AJT2CL重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
DFN1006-3
安装类型
表面贴装
供应商器件包装
DFN1006-3
RoHS
Details
Mounting Styles
SMD/SMT
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
1.4 A
Rds On - Drain-Source Resistance
290 mOhms
Vgs - Gate-Source Voltage
- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
600 mW
Channel Mode
Enhancement
Fall Time
2.5 ns
Factory Pack QuantityFactory Pack Quantity
8000
Typical Turn-Off Delay Time
7.8 ns
Typical Turn-On Delay Time
3.6 ns
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃
700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
厂商
Rohm Semiconductor
Power Dissipation (Max)
400mW (Ta)
Product Status
活跃
包装
MouseReel
操作温度
150°C (TJ)
系列
-
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
290mOhm @ 1.4A, 4.5V
不同 Id 时 Vgs(th)(最大值)
1.5V @ 1mA
输入电容(Ciss)(Max)@Vds
105 pF @ 15 V
上升时间
4.4 ns
漏源电压 (Vdss)
30 V
Vgs(最大值)
±12V
晶体管类型
1 N-Channel
场效应管特性
-
RV2E014AJT2CL拓展信息
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