Rohm Semiconductor RV4C020ZPHZGTCR1

安装类型

Surface Mount, Wettable Flank

包装/外壳

6-PowerWFDFN

供应商器件包装

DFN1616-6W

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1.3V @ 1mA

Power Dissipation (Max)

1.5W (Ta)

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Continuous Drain Current Id

2A

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

10 ns

Vgs th - Gate-Source Threshold Voltage

1.3 V

Pd - Power Dissipation

1.5 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

2 nC

Rds On - Drain-Source Resistance

260 mOhms

RoHS

Details

Typical Turn-Off Delay Time

3800 ns

Id - Continuous Drain Current

2 A

系列

Automotive, AEC-Q101

操作温度

150°C (TJ)

包装

切割胶带

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

1.5W

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

260mOhm @ 2A, 4.5V

输入电容(Ciss)(Max)@Vds

80 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

2 nC @ 4.5 V

上升时间

120 ns

漏源电压 (Vdss)

20 V

Vgs（最大值）

±8V

产品类别

MOSFET

晶体管类型

Small Signal MOSFET

信道型

P Channel

场效应管特性

-

产品类别

MOSFET