Rohm Semiconductor RV4E031RPHZGTCR1

安装类型

Surface Mount, Wettable Flank

包装/外壳

6-PowerWFDFN

供应商器件包装

DFN1616-6W

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

3.1A (Ta)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 1mA

Power Dissipation (Max)

1.5W (Ta)

Base Product Number

RV4E031

厂商

Rohm Semiconductor

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Qualification

AEC-Q101

Pd - Power Dissipation

1.5 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

-

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

4.8 nC

Rds On - Drain-Source Resistance

105 mOhms

RoHS

Details

Id - Continuous Drain Current

3.1 A

操作温度

-55°C ~ 150°C (TJ)

系列

Automotive, AEC-Q101

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

105mOhm @ 3.1A, 10V

输入电容(Ciss)(Max)@Vds

460 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

4.8 nC @ 5 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET