Rohm Semiconductor RV5A040APTCR1
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RV5A040APTCR1
2078-RV5A040APTCR1
晶体管 - FET,MOSFET - 单个
6-PowerWFDFN
大陆
立即发货

MOSFET P-CH 12V 4A DFN1616-6
--最小包装量--
RV5A040APTCR1详情
Rohm Semiconductor RV5A040APTCR1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-PowerWFDFN
供应商器件包装
DFN1616-8S
厂商
Rohm Semiconductor
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Power Dissipation (Max)
700mW (Ta)
Qualification
-
Continuous Drain Current Id
4A
Vds - Drain-Source Breakdown Voltage
12 V
Typical Turn-On Delay Time
11 ns
Vgs th - Gate-Source Threshold Voltage
1 V
Pd - Power Dissipation
1.5 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 8 V, 0 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
ROHM 半导体
Brand
ROHM 半导体
Qg - Gate Charge
16 nC
Rds On - Drain-Source Resistance
62 mOhms
RoHS
Details
Typical Turn-Off Delay Time
160 ns
Id - Continuous Drain Current
4 A
系列
-
操作温度
150°C (TJ)
包装
MouseReel
子类别
MOSFETs
通道数量
1 Channel
功率耗散
1.5W
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
62mOhm @ 4A, 4.5V
不同 Id 时 Vgs(th)(最大值)
1V @ 1mA
输入电容(Ciss)(Max)@Vds
2000 pF @ 6 V
门极电荷(Qg)(最大)@Vgs
16 nC @ 4.5 V
上升时间
40 ns
漏源电压 (Vdss)
12 V
Vgs(最大值)
-8V, 0V
产品类别
MOSFET
信道型
P Channel
场效应管特性
-
产品类别
MOSFET
RV5A040APTCR1拓展信息
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
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