Rohm Semiconductor RV8C010UNHZGG2CR

安装类型

表面贴装

包装/外壳

3-XFDFN

引脚数

3

供应商器件包装

DFN1010-3W

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

1A (Ta)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1V @ 1mA

Power Dissipation (Max)

1W

Base Product Number

RV8C010

Qualification

AEC-Q101

Continuous Drain Current Id

1A

Package Type

DFN1010

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

5 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

1 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

100

Mounting Styles

SMD/SMT

Forward Transconductance - Min

400 mS

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

-

Rds On - Drain-Source Resistance

470 mOhms

RoHS

Details

Typical Turn-Off Delay Time

15 ns

Id - Continuous Drain Current

1 A

系列

Automotive, AEC-Q101

操作温度

150°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

1W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

470mOhm @ 500mA, 4.5V

输入电容(Ciss)(Max)@Vds

40 pF @ 10 V

上升时间

15 ns

漏源电压 (Vdss)

20 V

Vgs（最大值）

±8V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET