Rohm Semiconductor RW4C045BCTCL1

安装类型

表面贴装

包装/外壳

6-PowerUFDFN

供应商器件包装

DFN1616-7T

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Power Dissipation (Max)

1.5W (Ta)

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

9 ns

Vgs th - Gate-Source Threshold Voltage

1.5 V

Pd - Power Dissipation

1.5 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

6.5 nC

Rds On - Drain-Source Resistance

56 mOhms

RoHS

Details

Typical Turn-Off Delay Time

50 ns

Id - Continuous Drain Current

4.5 A

系列

-

操作温度

150°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

56mOhm @ 4.5A, 4.5V

不同 Id 时 Vgs(th)（最大值）

1.5V @ 1mA

输入电容(Ciss)(Max)@Vds

460 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

6.5 nC @ 4.5 V

上升时间

36 ns

漏源电压 (Vdss)

20 V

Vgs（最大值）

±8V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET