Rohm Semiconductor RW4E045AJTCL1

安装类型

表面贴装

包装/外壳

6-PowerUFDFN

供应商器件包装

DFN1616-7T

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Power Dissipation (Max)

1.5W (Ta)

Continuous Drain Current

4.5(A)

Drain-Source On-Volt

30(V)

Operating Temperature Classification

Military

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±12(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

表面贴装

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

7.2 ns

Vgs th - Gate-Source Threshold Voltage

1.5 V

Pd - Power Dissipation

1.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

4 nC

Rds On - Drain-Source Resistance

40 mOhms

RoHS

Details

Typical Turn-Off Delay Time

13 ns

Id - Continuous Drain Current

4.5 A

系列

-

操作温度

150°C (TJ)

包装

卷带

类型

功率MOSFET

子类别

MOSFETs

引脚数量

7

极性

N

配置

Single

通道数量

1 Channel

功率耗散

1.5(W)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

40mOhm @ 4.5A, 4.5V

不同 Id 时 Vgs(th)（最大值）

1.5V @ 1mA

输入电容(Ciss)(Max)@Vds

450 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

4 nC @ 4.5 V

上升时间

5.8 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±12V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET