Rohm Semiconductor RW4E075AJTCL1

包装/外壳

6-PowerUFDFN

安装类型

表面贴装

供应商器件包装

DFN1616-7T

Power Dissipation (Max)

1.5W (Ta)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1.5V @ 2mA

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Current - Continuous Drain (Id) @ 25℃

7.5A (Ta)

Product Status

活跃

厂商

Rohm Semiconductor

MSL

-

Qualification

-

Continuous Drain Current Id

7.5A

Id - Continuous Drain Current

7.5 A

Typical Turn-Off Delay Time

40 ns

RoHS

Details

Rds On - Drain-Source Resistance

26 mOhms

Qg - Gate Charge

6.3 nC

Brand

ROHM 半导体

Manufacturer

ROHM 半导体

Channel Mode

Enhancement

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

3000

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

1.5 W

Vgs th - Gate-Source Threshold Voltage

1.5 V

Typical Turn-On Delay Time

7.7 ns

Vds - Drain-Source Breakdown Voltage

30 V

操作温度

150°C (TJ)

系列

-

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

1.5W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

26mOhm @ 7.5A, 4.5V

输入电容(Ciss)(Max)@Vds

720 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

6.3 nC @ 4.5 V

上升时间

7 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±12V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET